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| SMD Type MOS Field Effect Power Transistor 2SK1284 IC MOSFET Features Low on-state resistance RDS(on) RDS(on) 0.32 .@VGS=10V,ID=2A 0.40 @VGS=4V,ID=2A +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.1 0.80-0.1 +0.15 0.50-0.15 Built-in G-S Gate Protection Diode 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10ms, duty cycle 5% Tch Tstg Symbol VDSS VGSS ID ID PD Rating 100 20 3.0 12 2.0 1.0 150 -55 to +150 Unit V V A A W W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=100V,VGS=0 VGS= 20V,VDS=0 1.0 2.4 0.26 0.32 500 VDS=10V,VGS=0,f=1MHZ 160 20 40 ID=2A,VGS(on)=10V,RL=25 ,VDD=50V,RG=10 55 500 120 0.32 0.40 pF pF pF ns ns ns ns Min Typ Max 10 10 2.5 Unit A A V s VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=10V,ID=2A VGS=10V,ID=2A VGS=4.0V,ID=2A 3.80 Low Ciss Ciss=500pF TYP. www.kexin.com.cn 1 |
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